Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots
Since the demonstration of molecular beam epitaxy which widened the ability to establish more applications based on semiconductor materials, and after the big success of quantum well structures for infrared detection, a lot of attention has been paid to the quantum discoveries [1], this has stimulat...
Published in: | Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts P. 19-20 |
---|---|
Main Author: | Douhan, Rahaf M. H. |
Other Authors: | Kokhanenko, Andrey P., Lozovoy, Kirill A. |
Format: | Book Chapter |
Language: | English |
Subjects: | |
Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000890370 Перейти в каталог НБ ТГУ |
Similar Items
- Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots
-
Performance analysis of multilayer Ge/Si photodetector with quantum dots
by: Dukhan, Rahaf M. H. - Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge-Si structure with Ge quantum dots for portable thermophotovoltaic converters
- Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
- Nanostructures with Ge-Si quantum dots for infrared photodetectors