Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal

We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of exposure to repetitively pulsed laser radiation [wavelength (2091 or 1064 nm), pulse repetition rate, be...

Full description

Bibliographic Details

Published in:	Quantum electronics Vol. 51, № 4. P. 306-316
Other Authors:	Yudin, Nikolay N., Antipov, Oleg L., Gribenyukov, Alexander I., Eranov, Ilya D., Podzyvalov, Sergey N., Zinoviev, Mikhail M., Voronin, L. A., Zhuravlyova, Yelena V., Zykova, M. P.
Format:	Article
Language:	English
Subjects:	монокристаллы оптическое повреждение лазерно-индуцированное разрушение статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000892345 Перейти в каталог НБ ТГУ