Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal

Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal

We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of exposure to repetitively pulsed laser radiation [wavelength (2091 or 1064 nm), pulse repetition rate, be...

Full description

Bibliographic Details
Published in:Quantum electronics Vol. 51, № 4. P. 306-316
Other Authors: Yudin, Nikolay N., Antipov, Oleg L., Gribenyukov, Alexander I., Eranov, Ilya D., Podzyvalov, Sergey N., Zinoviev, Mikhail M., Voronin, L. A., Zhuravlyova, Yelena V., Zykova, M. P.
Format: Article
Language:English
Subjects:
монокристаллы
оптическое повреждение
лазерно-индуцированное разрушение
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000892345
Перейти в каталог НБ ТГУ
Description
Summary:We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of exposure to repetitively pulsed laser radiation [wavelength (2091 or 1064 nm), pulse repetition rate, beam diameter, exposure time, sample temperature] on the laser-induced damage threshold (LIDT) of the surfaces of these crystals. It is found that thermal annealing of ZnGeP2 single crystals and their irradiation with a flux of fast electrons, which increase the LIDT at a wavelength of λ = 1064 nm, do not lead to a change in this threshold at λ = 2091 nm. It is shown that ZnGeP2 elements with lower optical losses in the spectral range 0.7 - 2.5 μm have a higher LIDT at λ = 2091 nm both immediately after fabrication and after postgrowth processing. An increase in the threshold energy density of laser radiation by a factor of 1.5 - 3 at λ = 2091 nm is revealed with a decrease in the crystal temperature from zero to -60 °C. The fact of reversible photodarkening of the propagation channel of laser radiation in ZnGeP2 in the predamage region of parameters is established by the method of digital holography.
Bibliography:Библиогр.: 42 назв.
ISSN:1063-7818

Similar Items