HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2...

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Bibliographic Details
Published in:Materials physics and mechanics Vol. 47, № 4. P. 577-581
Other Authors: Stepanov, Sergey I., Nikolaev, Vladimir I., Almaev, Aleksei V., Pechnikov, Aleksei I., Scheglov, Mikhail P., Chikiryaka, Andrei V., Kushnarev, Bogdan O., Polyakov, A. Y.
Format: Article
Language:English
Subjects:
пленки оксида галлия
сапфировые подложки
метод высокочастотного магнетронного распыления
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000894602
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Description
Summary:Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2.
Bibliography:Библиогр.: 17 назв.
ISSN:1605-2730

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