HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2...

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Bibliographic Details
Published in:Materials physics and mechanics Vol. 47, № 4. P. 577-581
Other Authors: Stepanov, Sergey I., Nikolaev, Vladimir I., Almaev, Aleksei V., Pechnikov, Aleksei I., Scheglov, Mikhail P., Chikiryaka, Andrei V., Kushnarev, Bogdan O., Polyakov, A. Y.
Format: Article
Language:English
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Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000894602
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245 1 0 |a HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer  |c S. I. Stepanov, V. I. Nikolaev, A. V. Almaev [et al.] 
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520 3 |a Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2. 
653 |a пленки оксида галлия 
653 |a сапфировые подложки 
653 |a метод высокочастотного магнетронного распыления 
655 4 |a статьи в журналах  |9 879358 
700 1 |a Stepanov, Sergey I.  |9 802461 
700 1 |a Nikolaev, Vladimir I.  |9 802460 
700 1 |a Almaev, Aleksei V.  |9 407941 
700 1 |a Pechnikov, Aleksei I.  |9 802462 
700 1 |a Scheglov, Mikhail P.  |9 811517 
700 1 |a Chikiryaka, Andrei V.  |9 878330 
700 1 |a Kushnarev, Bogdan O.  |9 802463 
700 1 |a Polyakov, A. Y.  |9 762031 
773 0 |t Materials physics and mechanics  |d 2021  |g Vol. 47, № 4. P. 577-581  |x 1605-2730  |w 0108-60660 
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