Methods of preparation and temporal stability of gase and InSe nanolayers

GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed sp...

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Bibliographic Details

Published in:	Russian physics journal Vol. 63, № 9. P. 1504-1509
Other Authors:	Redkin, Ruslan A., Kobtsev, Daniil A., Bereznaya, Svetlana A., Korotchenko, Zoya V., Novikov, Vadim A., Sarkisov, Sergey Yu
Format:	Article
Language:	English
Subjects:	селенид индия селенид галлия нанослои квазидвумерные полупроводниковые наночастицы физическое осаждение из паровой фазы морфология поверхности рамановские спектры статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000895621 Перейти в каталог НБ ТГУ