Avalanche delay and dynamic triggering in gaas-based s-diodes doped with deep level impurity

The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are simulated in a simplified generator. The dynamic electric field and charge profiles in the structur...

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Bibliographic Details

Published in:	IEEE transactions on electron devices Vol. 68, № 1. P. 57-65
Other Authors:	Prudaev, Ilya A., Vainshtein, Sergey N., Verkholetov, Maksim G., Oleinik, Vladimir L., Kopyev, Viktor V.
Format:	Article
Language:	English
Subjects:	лавинный пробой S-диоды генераторы оптических импульсов системы импульсного питания статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000895713 Перейти в каталог НБ ТГУ