Ion implantation in β-Ga2O3: Physics and technology

Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for th...

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Bibliographic Details

Published in:	Journal of vacuum science & technology A Vol. 39, № 3. P. 030802-1-030802-25
Other Authors:	Nikolskaya, Alena, Okulich, Evgenia, Korolev, Dmitry, Stepanov, Anton, Nikolichev, Dmitry, Mikhaylov, Alexey, Tetelbaum, David, Almaev, Aleksei V., Bolzan, Charles Airton, Buaczik, Antônio Jr, Giulian, Raquel, Grande, Pedro Luis, Kumar, Ashok, Kumar, Mahesh, Gogova, Daniela S.
Format:	Article
Language:	English
Subjects:	ионная имплантация оксид галлия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000896405 Перейти в каталог НБ ТГУ