Interface features and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction
Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. The redistribution of states near the Fermi level in hybrid structure and the impact of spin-orbit co...
| Published in: | Proceedings of SPIE Vol. 12086 : XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation. P. 120860F-1-120860F-5 |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901034 |