Optical pump-terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes

Optical pump-terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes

The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump-terahertz probe technique. Charge carrier...

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Bibliographic Details
Published in:Photonics Vol. 8, № 12. P. 575 (1-11)
Other Authors: Kolesnikova, Irina I., Kobtsev, Daniil A., Redkin, Ruslan A., Voevodin, Vladimir I., Tyazhev, Anton V., Tolbanov, Oleg P., Sarkisov, Yuri S., Sarkisov, Sergey Yu, Atuchin, Victor V.
Format: Article
Language:English
Subjects:
оптическая накачка
терагерцовые зонды
срок службы носителей заряда
Шокли-Рида-Холла рекомбинация
Оже-рекомбинация
поверхностные дефекты
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901386
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