Influence of postgrowth processing technology on the laser induced damage threshold of ZnGeP2 single crystal

The laser induced damage thresholds of ZnGeP2 single crystals are determined. The values of the thresholds under the action of laser radiation at a wavelength of 2,097 μm, pulse repetition frequency of 10 kHz, and pulse duration of 35 ns are W0d =1.8 J/cm2 and W0d =2.1 J/cm2 for crystals manufacture...

Full description

Bibliographic Details

Published in:	Russian physics journal Vol. 64, № 11. P. 2096-2101
Other Authors:	Yudin, Nikolay N., Antipov, Oleg L., Gribeniukov, Alexander I., Dyomin, Victor V., Zinoviev, Mikhail M., Podzyvalov, Sergey N., Slyunko, Elena S., Zhuravleva, Elena V., Pfeif, A. A., Yudin, Nikolay A., Kulesh, Maksim M., Moskvichev, Evgeny N.
Format:	Article
Language:	English
Subjects:	порог лазерного разрушения нелинейная оптика нелинейные кристаллы дифосфида цинка-герма ния статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000925697 Перейти в каталог НБ ТГУ