Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity

He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer grown by halide vapor phase epitaxy with implanted Si+ ions allows effective control of its sensitiv...

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Bibliographic Details

Published in:	Materials physics and mechanics Vol. 48, № 3. P. 301-307
Other Authors:	Yakovlev, Nikita N., Almaev, Aleksei V., Butenko, Pavel N., Mikhaylov, A. N., Pechnikov, Aleksei I., Stepanov, Sergey I., Timashov, R. B., Chikiryaka, Andrei V., Nikolaev, Vladimir I.
Format:	Article
Language:	English
Subjects:	газофазная эпитаксия галогениды ионная имплантация газовая чувствительность статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997191 Перейти в каталог НБ ТГУ