Formation of dislocations in the process of impurity diffusion in GaAs
A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elements of II, IV, and VI groups and transition elements) is studied, depending on the conditions of diff...
| Published in: | Russian physics journal Vol. 64, № 12. P. 2350-2356 |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997193 Перейти в каталог НБ ТГУ |