Showing 1 - 20 results of 63 for search '"адмиттанс"', query time: 0.05s Refine Results
  1. 1
    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
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  2. 2
    Исследование светодиодов из AlGaInP методикой спектроскопии адмиттанса
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    Book Chapter
  3. 3
    Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
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  4. 4
    Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator
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  5. 5
    Admittance investigation of MIS structures with GgTe-based single quantum wells
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  6. 6
    Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode
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  7. 7
    Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range
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  8. 8
    Адмиттанс МДП-приборов на основе теллурида кадмия ртути с одиночными квантовыми ямами теллурида ртути в активной области
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    Book Chapter
  9. 9
    Электрофизические свойства МДП-структур на основе пентацена в широком диапазоне температур
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  10. 10
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
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  11. 11
    Адмиттанс многослойных органо-неорганических систем на основе пентацена в широком диапазоне температур
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    Book Chapter
  12. 12
    Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range
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  13. 13
    Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
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  14. 14
    Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator
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  15. 15
    The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
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    Article
  16. 16
    Admittance of HgCdTe MIS structures with HgTe single quantum well
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    Book Chapter
  17. 17
    Модификация поверхности твердых растворов CdхHg1-хTe рентгеновским излучением
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  18. 18
    Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer
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  19. 19
    Особенности моделирования частотных зависимостей адмиттанса МДП-структуры на основе органической пленки P3HT с диэлектрическим слоем Al2O3
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  20. 20
    Адмиттансные характеристики nBn-структур на основе HgCdTe, выращенного методом молекулярно-лучевой эпитаксии
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