Showing 461 - 480 results of 527 for search '"Semiconductors"', query time: 0.07s Refine Results
  1. 461
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
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    Article
  2. 462
    Ab-initio study of cation-rich InP(001) and GaP(001) surface reconstructions and iodine adsorption
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    Article
  3. 463
    Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear
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    Article
  4. 464
    Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe
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    Article
  5. 465
    Electroencephalography registration of laser acupuncture action on children with autism disorder
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    Book Chapter
  6. 466
    Topological states induced by local structural modification of the polar BiTeI(0001) surface
    Published in New journal of physics
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    Article
  7. 467
    Pressure-induced topological phases of KNa2Bi
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    Article
  8. 468
    Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures
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    Article
  9. 469
    Silicon Analog Components Device Design, Process Integration, Characterization, and Reliability /
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    eBook
  10. 470
    Applied Photochemistry
    Published in Springer eBooks (2013)
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    eBook
  11. 471
    Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: a case study of GZO
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    Article
  12. 472
    Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4
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    Article
  13. 473
    Towards a Compact Thin-Disk-Based Femtosecond XUV Source
    by Pronin, Oleg
    Published in Springer eBooks (2014)
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    eBook
  14. 474
    The impact of the plasma volume discharge in the atmospheric-pressure air on the distribution of the surface potential in a V-defect region of epitaxial HgCdTe films
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    Article
  15. 475
    New spin-polarized electron source based on alkali antimonide photocathode
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    Article
  16. 476
    Single‑photon avalanche diode detectors based on group IV materials
    Published in Applied nanoscience
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    Article
  17. 477
    Роботизация демонстрационной модели маятника Цельнера
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    Book Chapter
  18. 478
    Switchable Schottky contacts: simultaneously enhanced output current and reduced leakage current
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    Article
  19. 479
    Annealing kinetics of radiation defects in boron-implanted p-Hg1-xCdxTe
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    Article
  20. 480
    Large electronic anisotropy and enhanced chemical activity of highly rippled phosphorene
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    Article
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