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Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators
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Voytsekhovskiy, Alexander V.
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Thin solid films
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Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
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Voytsekhovskiy, Alexander V.
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Study of nanometric thin pyrolytic carbon films for explosive electron emission cathode in high-voltage planar diode
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Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K
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Rolling Contact Fatigue in a Vacuum Test Equipment and Coating Analysis /
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Danyluk, Michael
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Dhingra, Anoop
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(2015)
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Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники
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