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231117|2023 sz s a eng d |
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|a 10.3390/nano13020231
|2 doi
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|a koha001009722
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|b rus
|c RU-ToGU
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|a Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface
|c V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko [et al.]
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|a Текст
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|a электронный
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|a Библиогр.: 66 назв.
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|a This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 ◦C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered.
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|a двумерные материалы
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| 653 |
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|a двумерные структуры
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|a молекулярно-лучевая эпитаксия
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|a кремний
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| 653 |
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|a германий
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| 653 |
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|a дифракция быстрых электронов на отражение
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|a статьи в журналах
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| 700 |
1 |
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|a Dirko, Vladimir V.
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1 |
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|a Lozovoy, Kirill A.
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1 |
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|a Kokhanenko, Andrey P.
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1 |
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|a Kukenov, Olzhas I.
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|a Korotaev, Alexander G.
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1 |
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|a Voytsekhovskiy, Alexander V.
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| 773 |
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|t Nanomaterials
|d 2023
|g Vol. 13, № 2. P. 231 (1-12)
|x 2079-4991
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| 852 |
4 |
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|a RU-ToGU
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| 856 |
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001009722
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|a статья
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|c 1009722
|d 1009722
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