Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the...
| Опубликовано в: : | Nanomaterials Vol. 13, № 2. P. 231 (1-12) |
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| Другие авторы: | , , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001009722 |