Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150-550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when e...

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Опубликовано в: :Materials today communications Vol. 34. P. 105241 (1-10)
Другие авторы: Yakovlev, Nikita N., Almaev, Aleksei V., Nikolaev, Vladimir I., Kushnarev, Bogdan O., Pechnikov, Aleksei I., Stepanov, Sergey I., Chikiryaka, Andrei V., Timashov, R. B., Scheglov, Mikhail P., Butenko, Pavel N., Almaev, Dmitry A., Chernikov, Evgeniy V.
Формат: Статья в журнале
Язык:English
Предметы:
газовые сенсоры
электрические свойства
низкое сопротивление
оксиды металлов
пленки
статьи в журналах
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Итог:The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150-550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when exposed to H2, NH3, CO and O2. A qualitative mechanism of gas sensitivity for the In2O3-Ga2O3 mixed compounds films to gases was proposed. The gas-sensitive characteristics of In2O3, κ(ε)-Ga2O3 and In2O3-Ga2O3 films were compared. The advantage of the In2O3-Ga2O3 mixed compounds films compared with Ga2O3 and In2O3 films is a low base electrical resistivity with a relatively high gas sensitivity.
Библиография:Библиогр.: 78 назв.
ISSN:2352-4928

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