Self-powered photo diodes based on Ga2O3/n-GaAs structures
The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of N_d=9.5·1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency o...
| Опубликовано в: : | Semiconductors Vol. 56, № 9. P. 707-711 |
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| Другие авторы: | , , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016318 |