Dependence of Ge/Si avalanche photodiode performance on the thickness and doping concentration of the multiplication and absorption layers
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, andwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentratio...
| Опубликовано в: : | Inorganics Vol. 11, № 7. P. 303 (1-15) |
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| Другие авторы: | , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001067502 Перейти в каталог НБ ТГУ |