Skip to content
  • Language
    • English
    • Русский

Advanced
  • Ge/Si avalanche photodiodes da...
  • Cite this
  • Print
  • Export Record
    • Export to RefWorks
    • Export to EndNoteWeb
    • Export to EndNote
  • Permanent link
Ge/Si avalanche photodiodes dark current

Ge/Si avalanche photodiodes dark current

Bibliographic Details
Published in:Актуальные проблемы радиофизики АПР-2023 : 10-я Международная научно-практическая конференция, 26-29 сентября 2023 года, г. Томск : сборник трудов конференции С. 301
Other Authors: Khomyakova, Kristina I., Douhan, Rahaf M. H., Deeb, Hazem, Kokhanenko, Andrey P., Lozovoy, Kirill A.
Format: Book Chapter
Language:English
Subjects:
лавинные фотодиоды
темновой ток
туннельный ток
статьи в сборниках
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132604
  • Holdings
  • Description
  • Similar Items
  • Staff View

Internet

http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132604

Similar Items

  • Dependence of Ge/Si avalanche photodiode performance on the thickness and doping concentration of the multiplication and absorption layers
  • Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots
  • Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe
  • Nanostructures with Ge-Si quantum dots for infrared photodetectors
  • Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors
|   Advanced Search   |   Search Tips   |

Большой университет Томска
https://university-tomsk.ru/
Loading...