Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity
The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum effic...
| Published in: | IEEE sensors journal Vol. 23, № 17. P. 19245-19255 |
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| Other Authors: | , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132768 Перейти в каталог НБ ТГУ |
| Summary: | The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency (EQE), and detectivity of MSM structures based on α -Ga2O3 were studied in the wavelength range of 205-260 nm. The responsivity, the EQE, and the detectivity are 7.19×104 A ×W−1 , 3.79×105 arb.un., and 1.12×1018 Hz 0.5× cm ×W−1 , respectively, for structures with an interelectrode distance of 30 μm at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in α -Ga2O3. The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown. |
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| Bibliography: | Библиогр.: 58 назв. |
| ISSN: | 1530-437X |