Dynamics of vacancy formation and distribution in semiconductor heterostructures: Effect of thermally generated intrinsic electrons
The effect of thermally generated equilibrium carrier distribution on the vacancy generation, recombination, and mobility in a semiconductor heterostructure with an undoped quantum well is studied. A different rate of thermally generated equilibrium carriers in layers with different band gaps at ann...
| Опубликовано в: : | Nanomaterials Vol. 13, № 2. P. 308 (1-21) |
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| Другие авторы: | , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001133161 Перейти в каталог НБ ТГУ |