Semiconductor devices based on gallium arsenide with deep impurity centers
The monograph is generalization of the results of extensive research into structures and devices based on gallium arsenide with deep impurity centers carried out in Tomsk State University, the Siberian Institute for Physics and Technology and the Scientific Research Institute of Semiconductor Device...
| Другие авторы: | , , , , |
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| Формат: | Электронная книга |
| Язык: | Russian |
| Публикация: |
Tomsk
TSU Press
2024
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| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001144896 |