Electrical properties of the V-defects of epitaxial HgCdTe
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In the present paper we propose using the methods of atomic-force microscopy to study the local distribu...
| Published in: | Journal of electronic materials Vol. 46, № 7. P. 4435-4438 |
|---|---|
| Other Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000620312 Перейти в каталог НБ ТГУ |