Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 ye...
| Published in: | Springer eBooks |
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| Main Authors: | , , |
| Corporate Author: | |
| Format: | eBook |
| Language: | English |
| Published: |
Dordrecht :
Springer Netherlands : Imprint: Springer,
2014.
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| Series: | Springer Series in Advanced Microelectronics,
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/978-94-007-7663-0 Перейти в каталог НБ ТГУ |