Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 ye...

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Bibliographic Details
Published in:Springer eBooks
Main Authors: Franco, Jacopo (Author), Kaczer, Ben (Author), Groeseneken, Guido (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
Series:Springer Series in Advanced Microelectronics,
Subjects:
physics.
Systems engineering.
Optical materials.
Physics.
Semiconductors.
Circuits and Systems.
Optical and Electronic Materials.
Electronic Circuits and Devices.
Online Access:http://dx.doi.org/10.1007/978-94-007-7663-0
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Table of Contents:
  • 1 Introduction
  • 2 Degradation mechanisms
  • 3 Techniques and devices
  • 4 Negative Bias Temperature Instability in (Si)Ge pMOSFETs
  • 5 Negative Bias Temperature Instability in nanoscale devices
  • 6 Channel Hot Carriers and other reliability mechanisms
  • 7 Conclusions and perspectives.

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