Electron concentration in the near-surface graded-gap layer of MBE n-Hg1-xCdxTe (x = 0.22-0.40) determined from the capacitance measurements of MIS-structures

Electron concentration in the near-surface graded-gap layer of MBE n-Hg1-xCdxTe (x = 0.22-0.40) determined from the capacitance measurements of MIS-structures

Capacitance-voltage (C-V) characteristics of MIS structures based on the graded-gap n-Hg1-xCdxTe (x = 0.22-0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of 9-77 K. The concentrations of majority charge carriers in the near-surface layer of the semiconduct...

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Bibliographic Details
Published in:Russian physics journal Vol. 60, № 1. P. 128-139
Other Authors: Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Grigoryev, Denis V., Lyapunov, D. V., Nesmelov, Sergey N.
Format: Article
Language:English
Subjects:
молекулярно-лучевая эпитаксия
концентрация электронов
МДП-структуры
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583079
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