Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Curre...

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Bibliographic Details

Published in:	Journal of Physics: Conference Series Vol. 741. P. 012015 (1-5)
Other Authors:	Pishchagin, Anton A., Kokhanenko, Andrey P., Serokhvostov, V. Yu, Dzyadukh, Stanislav M., Nikiforov, Alexander I., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	квантовые точки адмиттанс спектроскопия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622061 Перейти в каталог НБ ТГУ