Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

The experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Curre...

Full description

Bibliographic Details
Published in:	Journal of Physics: Conference Series Vol. 741. P. 012015 (1-5)
Other Authors:	Pishchagin, Anton A., Kokhanenko, Andrey P., Serokhvostov, V. Yu, Dzyadukh, Stanislav M., Nikiforov, Alexander I., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	квантовые точки адмиттанс спектроскопия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622061 Перейти в каталог НБ ТГУ

Similar Items

Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods

Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods

Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy

Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots

Admittance Spectroscopy for the Research of Germanium-on-Silicon Quantum Dot Structures Parameters

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy

Phonon bottleneck in p-type Ge/Si quantum dots

Исследование Si/Ge p-i-n структур с квантовыми точками Ge методом адмиттансной спектроскопии

Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots
by: Douhan, Rahaf M. H.

Performance analysis of multilayer Ge/Si photodetector with quantum dots
by: Dukhan, Rahaf M. H.

Suppression of hole relaxation in small sized Ge/Si quantum dots

Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots

Nanostructures with Ge-Si quantum dots for infrared photodetectors

GE/SI quantum dots formation by the method of molecular beam epitaxy

Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

Admittance investigation of MIS structures with GgTe-based single quantum wells

Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge-Si structure with Ge quantum dots for portable thermophotovoltaic converters

Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method

Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
by: Kokhanenko, Andrey P.

Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges

Admittance of HgCdTe MIS structures with HgTe single quantum well

Исследование характеристик наногетероструктур Si/Ge с квантовыми точками методом адмиттансной спектроскопии

Свойства гетероструктур с квантовыми точками Ge/Si для нанофотоники

Molecular dynamics simulations of the growth of Ge on Si

Электрофизические характеристики наногетероструктур Si/Ge с квантовыми точками Ge

Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system

Localization of electrons in dome-shaped GeSi/Si islands

Исследование свойств гетероструктур Ge/Si с квантовыми точками Ge
by: Турапин, Алексей Михайлович

Инфракрасные детекторы с квантовыми точками Ge/Si

Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
by: Lozovoy, Kirill A.

Наногетероструктуры Ge/Si с упорядоченными квантовыми точками Ge для применения в оптоэлектронике

Structural properties and energy spectrum of novel GaSb/AlP self-assembled quantum dots

The growth of SiGe nanostructures by molecular beam epitaxy

Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K

Оптические и фотоэлектрические свойства наногетероструктур Si/Ge с квантовыми точками Ge

Влияние параметров синтеза гетероструктур Si/Ge с квантовыми точками Ge на морфологию массива квантовых точек Ge
by: Пищагин, Антон Александрович

Спектры оптического поглощения Si с квантовыми точками Ge
by: Брудный, Валентин Натанович

Исследование спектра поглощения Si:Ge наногетероструктур

Детекторы ИК-диапазона на структурах с квантовыми точками Ge/Si