Magneto-transport in inverted HgTe quantum wells

Magneto-transport in inverted HgTe quantum wells

HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at the critical thickness dc, corresponding to the band inversion and topological phase transition. The motivation of this work was to study magnetotransport properties of HgTe QWs with thickness approach...

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Bibliographic Details
Published in:npj Quantum materials Vol. 4. P. 13 (1-8)
Other Authors: Krishtopenko, Sergey S., Grabecki, Grzegorz, Jouault, Benoit, Consejo, Christophe, Desrat, Wilfried, Kadykov, Alexander M., Spirin, Kirill E., Gavrilenko, Vladimir I., Mikhailov, Nikolay N., Dvoretsky, Sergei A., But, Dmytro B., Teppe, Frederic, Wróbel, Jerzy, Cywiński, Grzegorz, Kret, Sławomir, Dietl, Tomasz, Knap, Wojciech, Yahniuk, Ivan, Majewicz, Magdalena
Format: Article
Language:English
Subjects:
квантовые ямы
теллурид ртути
магнитотранспортные свойства
Холла квантовый эффект
статьи в журналах
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