Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation

In this paper, we consider the 7x7 to 5x5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of t...

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Bibliographic Details

Published in:	Journal of Physics: Conference Series Vol. 1482. P. 012010 (1-5)
Other Authors:	Lozovoy, Kirill A., Kokhanenko, Andrey P., Kukenov, Olzhas I., Dirko, Vladimir V.
Format:	Article
Language:	English
Subjects:	сверхструктурный переход синтез эпитаксиальных слоев метод дифракции электронов высоких энергий на отражение температура подложки статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794753 Перейти в каталог НБ ТГУ