Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation
In this paper, we consider the 7x7 to 5x5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of t...
| Published in: | Journal of Physics: Conference Series Vol. 1482. P. 012010 (1-5) |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794753 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.1088/1742-6596/1482/1/012010 |2 doi | |
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| 039 | 9 | |a 202103051717 |b 100 |c 202103041719 |d VLOAD |y 202103041703 |z Александр Эльверович Гилязов | |
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| 245 | 1 | 0 | |a Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation |c V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko, O. I. Kukenov |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 12 назв. | ||
| 520 | 3 | |a In this paper, we consider the 7x7 to 5x5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is investigated by reflection high-energy electron diffraction (RHEED). As a result, the dependences of the critical thickness of the 7x7 to 5x5 superstructure transition on the substrate temperature are obtained for the first time. | |
| 653 | |a сверхструктурный переход | ||
| 653 | |a синтез эпитаксиальных слоев | ||
| 653 | |a метод дифракции электронов высоких энергий на отражение | ||
| 653 | |a температура подложки | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Lozovoy, Kirill A. |9 91708 | |
| 700 | 1 | |a Kokhanenko, Andrey P. |9 91707 | |
| 700 | 1 | |a Kukenov, Olzhas I. |9 899610 | |
| 700 | 1 | |a Dirko, Vladimir V. |9 487202 | |
| 773 | 0 | |t Journal of Physics: Conference Series |d 2020 |g Vol. 1482. P. 012010 (1-5) |x 1742-6588 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794753 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=479932 | ||
| 908 | |a статья | ||
| 999 | |c 479932 |d 479932 | ||