Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators
Published in: | Thin solid films Vol. 522. P. 261-266 |
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Main Author: | |
Corporate Authors: | , |
Other Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000445880 Перейти в каталог НБ ТГУ |