Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy

The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in ele...

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Bibliographic Details

Published in:	Russian physics journal Vol. 58, № 7. P. 970-977
Other Authors:	Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Grigoryev, Denis V., Tarasenko, Viktor Fedotovich, Shulepov, Mikhail A., Nesmelov, Sergey N.
Format:	Article
Language:	English
Subjects:	теллурид кадмия-ртути молекулярно-лучевая эпитаксия наносекундные разряды адмиттанс МДП-структуры статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000548081 Перейти в каталог НБ ТГУ