Electro-physical characteristics of MIS structures with HgTe-based single quantum wells

Electro-physical characteristics of MIS structures with HgTe-based single quantum wells

The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and...

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Bibliographic Details
Published in:Journal of Physics: Conference Series Vol. 661. P. 012032 (1-6)
Other Authors: Dzyadukh, Stanislav M., Voytsekhovskiy, Alexander V., Gorn, Dmitriy Igorevich, Nesmelov, Sergey N.
Format: Article
Language:English
Subjects:
электрофизические свойства
МДП-структуры
теллурид кадмия-ртути
квантовые ямы
молекулярно-лучевая эпитаксия
статьи в журналах
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