Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-vol...

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Bibliographic Details
Published in:EPJ Web of Conferences Vol. 133. P. 02001 (1-4)
Other Authors: Pociask-Bialy, Malgorzata, Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Izhnin, Igor I.
Format: Article
Language:English
Subjects:
инфракрасное излучение
электрические характеристики
поверхностно-барьерные наноструктуры
градиентные слои
МДП-структуры
квантовые ямы
вольт-частотные характеристики
статьи в журналах
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