Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-vol...

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Bibliographic Details
Published in:EPJ Web of Conferences Vol. 133. P. 02001 (1-4)
Other Authors: Pociask-Bialy, Malgorzata, Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Izhnin, Igor I.
Format: Article
Language:English
Subjects:
инфракрасное излучение
электрические характеристики
поверхностно-барьерные наноструктуры
градиентные слои
МДП-структуры
квантовые ямы
вольт-частотные характеристики
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577240
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Description
Summary:Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.
Bibliography:Библиогр.: 8 назв.
ISSN:2100-014X

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