Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers

Admittance of MIS structures based on MBE n-Hg1-xCdxTe (x=0.22-0.23) with Al2O3 as insulator is experimentally investigated for the cases of the presence and absence of near-surface graded-gap layers with high content of CdTe. It is shown that the structures with graded-gap layers are characterized...

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Bibliographic Details

Published in:	Journal of physics and chemistry of solids Vol. 102. P. 42-48
Main Author:	Voytsekhovskiy, Alexander V.
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M.
Format:	Article
Language:	English
Subjects:	адмиттанс градиентные слои вольт-фарадные характеристики электрические характеристики МДП-структуры статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577239 Перейти в каталог НБ ТГУ