Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation

The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was investigated. The changes of the conductivity type in the near-surface layer of HgCdTe after ion implanta...

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Bibliographic Details

Published in:	Journal of Physics: Conference Series Vol. 830. P. 012081 (1-4)
Other Authors:	Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Izhnin, Igor I., Nesmelov, Sergey N.
Format:	Article
Language:	English
Subjects:	ионная имплантация эпитаксиальные пленки приповерхностные слои статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583441 Перейти в каталог НБ ТГУ