Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices

The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and...

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Bibliographic Details

Published in:	Journal of Physics: Conference Series Vol. 735. P. 012012 (1-5)
Other Authors:	Dzyadukh, Stanislav M., Voytsekhovskiy, Alexander V., Gorn, Dmitriy Igorevich, Nesmelov, Sergey N.
Format:	Article
Language:	English
Subjects:	квантовые ямы оптоэлектронные устройства адмиттанс МДП-структуры статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622054 Перейти в каталог НБ ТГУ