Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges

In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of s...

Full description

Bibliographic Details

Published in:	Journal of Physics: Conference Series Vol. 741. P. 012019 (1-4)
Other Authors:	Lozovoy, Kirill A., Kokhanenko, Andrey P., Voytsekhovskiy, Alexander V., Pishchagin, Anton A.
Format:	Article
Language:	English
Subjects:	математическое моделирование молекулярно-лучевая эпитаксия квантовые точки статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622057 Перейти в каталог НБ ТГУ