Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of s...
| Published in: | Journal of Physics: Conference Series Vol. 741. P. 012019 (1-4) |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622057 |