Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy

The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1−xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal...

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Bibliographic Details

Published in:	Journal of electronic materials Vol. 47, № 5. P. 2694-2702
Main Author:	Voytsekhovskiy, Alexander V.
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M.
Format:	Article
Language:	English
Subjects:	молекулярно-лучевая эпитаксия концентрация носителей заряда теллурид кадмия-ртути статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000634052 Перейти в каталог НБ ТГУ