Admittance of MIS structures based on MBE Hg1 -xCdxTe (x = 0.21-0.23) in a wide temperature range
Features of the electrical properties of n(p)-Hg1-xCdxTe (x = 0.21-0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures base...
| Published in: | Journal of communications technology and electronics Vol. 63, № 9. P. 1112-1118 |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789380 Перейти в каталог НБ ТГУ |