Admittance of MIS structures based on MBE Hg1 -xCdxTe (x = 0.21-0.23) in a wide temperature range
Features of the electrical properties of n(p)-Hg1-xCdxTe (x = 0.21-0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures base...
| Published in: | Journal of communications technology and electronics Vol. 63, № 9. P. 1112-1118 |
|---|---|
| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789380 Перейти в каталог НБ ТГУ |
| LEADER | 02072nab a2200373 c 4500 | ||
|---|---|---|---|
| 001 | vtls000789380 | ||
| 003 | RU-ToGU | ||
| 005 | 20230319221621.0 | ||
| 007 | cr | | ||
| 008 | 201201|2018 xxu s a eng dd | ||
| 024 | 7 | |a 10.1134/S1064226918090231 |2 doi | |
| 035 | |a to000789380 | ||
| 039 | 9 | |a 202012071830 |c 202012071814 |d cat34 |c 202012011629 |d VLOAD |y 202012011608 |z Александр Эльверович Гилязов | |
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Admittance of MIS structures based on MBE Hg1 -xCdxTe (x = 0.21-0.23) in a wide temperature range |c A. V. Voytsekhovskiy, N. A. Kulchitsky, S. N. Nesmelov, S. M. Dzyadukh |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 20 назв. | ||
| 520 | 3 | |a Features of the electrical properties of n(p)-Hg1-xCdxTe (x = 0.21-0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1-xCdxTe (x = 0.21-0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed. | |
| 653 | |a МДП-структуры | ||
| 653 | |a молекулярно-лучевая эпитаксия | ||
| 653 | |a адмиттанс | ||
| 653 | |a варизонный слой | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Kulchitskii, N. A. |9 803710 | |
| 700 | 1 | |a Nesmelov, Sergey N. |9 101528 | |
| 700 | 1 | |a Dzyadukh, Stanislav M. |9 95711 | |
| 700 | 1 | |a Voytsekhovskiy, Alexander V. |9 91706 | |
| 773 | 0 | |t Journal of communications technology and electronics |d 2018 |g Vol. 63, № 9. P. 1112-1118 |x 1064-2269 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789380 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=474613 | ||
| 908 | |a статья | ||
| 999 | |c 474613 |d 474613 | ||