Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K

Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9-300 K. The capacitance-voltage curves of the fabricated capacitors had virtually no hysteresis when using SiO2 as an insulator. The hole concentration values,...

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Bibliographic Details

Published in:	Thin solid films Vol. 692. P. 137622 (1-7)
Other Authors:	Nesmelov, Sergey N., Novikov, Vadim A., Dzyadukh, Stanislav M., Kopylova, Tatyana N., Ivonin, Ivan V., Degtyarenko, Konstantin M., Tereshchenko, Evgeny V., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	органические полупроводники полупроводники конденсаторы металл-диэлектрик пентацен вольт-фарадная характеристика статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000791081 Перейти в каталог НБ ТГУ