Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K
Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9-300 K. The capacitance-voltage curves of the fabricated capacitors had virtually no hysteresis when using SiO2 as an insulator. The hole concentration values,...
| Published in: | Thin solid films Vol. 692. P. 137622 (1-7) |
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| Other Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000791081 Перейти в каталог НБ ТГУ |
| Summary: | Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9-300 K. The capacitance-voltage curves of the fabricated capacitors had virtually no hysteresis when using SiO2 as an insulator. The hole concentration values, determined using the Mott-Schottky analysis, were in the range of (1.0-1.3) × 1018 cm-3, depending on the substrate used. It is shown that the hole concentration remains constant over a wide range of frequencies and temperatures. It is shown that the type of the substrate (SiO2 and SiO2/Ga2O3) significantly affects the electrical characteristics of pentacene MIS capacitors. A pentacene film grown on SiO2 substrate was found to have a shallow level with activation energy of about 3 meV. For the case of using SiO2/Ga2O3 substrate, trap levels with activation energies of (5.5-6.0) and (480-570) meV were revealed. |
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| ISSN: | 0040-6090 |