Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K
Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9-300 K. The capacitance-voltage curves of the fabricated capacitors had virtually no hysteresis when using SiO2 as an insulator. The hole concentration values,...
| Published in: | Thin solid films Vol. 692. P. 137622 (1-7) |
|---|---|
| Other Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000791081 Перейти в каталог НБ ТГУ |
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| 001 | vtls000791081 | ||
| 003 | RU-ToGU | ||
| 005 | 20230319221753.0 | ||
| 007 | cr | | ||
| 008 | 201223|2019 sz s a eng dd | ||
| 024 | 7 | |a 10.1016/j.tsf.2019.137622 |2 doi | |
| 035 | |a to000791081 | ||
| 039 | 9 | |a 202012261233 |c 202012231628 |d VLOAD |y 202012231619 |z Александр Эльверович Гилязов | |
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K |c A. V. Voytsekhovskiy, S. N. Nesmelov, V. A. Novikov [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 520 | 3 | |a Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9-300 K. The capacitance-voltage curves of the fabricated capacitors had virtually no hysteresis when using SiO2 as an insulator. The hole concentration values, determined using the Mott-Schottky analysis, were in the range of (1.0-1.3) × 1018 cm-3, depending on the substrate used. It is shown that the hole concentration remains constant over a wide range of frequencies and temperatures. It is shown that the type of the substrate (SiO2 and SiO2/Ga2O3) significantly affects the electrical characteristics of pentacene MIS capacitors. A pentacene film grown on SiO2 substrate was found to have a shallow level with activation energy of about 3 meV. For the case of using SiO2/Ga2O3 substrate, trap levels with activation energies of (5.5-6.0) and (480-570) meV were revealed. | |
| 653 | |a органические полупроводники | ||
| 653 | |a полупроводники | ||
| 653 | |a конденсаторы металл-диэлектрик | ||
| 653 | |a пентацен | ||
| 653 | |a вольт-фарадная характеристика | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Nesmelov, Sergey N. |9 101528 | |
| 700 | 1 | |a Novikov, Vadim A. |9 96879 | |
| 700 | 1 | |a Dzyadukh, Stanislav M. |9 95711 | |
| 700 | 1 | |a Kopylova, Tatyana N. |9 83123 | |
| 700 | 1 | |a Ivonin, Ivan V. |9 208660 | |
| 700 | 1 | |a Degtyarenko, Konstantin M. |9 99501 | |
| 700 | 1 | |a Tereshchenko, Evgeny V. |9 507871 | |
| 700 | 1 | |a Voytsekhovskiy, Alexander V. |9 91706 | |
| 773 | 0 | |t Thin solid films |d 2019 |g Vol. 692. P. 137622 (1-7) |x 0040-6090 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000791081 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=475824 | ||
| 908 | |a статья | ||
| 999 | |c 475824 |d 475824 | ||